Trap-assisted tunnelling current in MIM structures

• Authors: Juraj Racko , Miroslav Mikolášek , Ralf Granzner , Juraj Breza , Daniel Donoval , Alena Grmanová , Ladislav Harmatha , Frank Schwierz , Karol Fröhlich
• Languages of publication: EN

Abstracts

EN

A new model is presented of current transport in Metal Insulator Metal (MIM) structures by quantum mechanical tunnelling. In addition to direct tunnelling through an insulating layer, tunnelling via defects present in the insulating layer plays an important role. Examples of the influence of the material and thickness of the insulating layer, energy distribution of traps, and metal work functions are also provided.

Keywords

EN

MIM; I-V characteristics; trap-assisted tunnelling; high-permittivity dielectrics

• Publisher: De Gruyter Open
• Journal: Open Physics
• Year: 2011
• Volume: 9
• Issue: 1
• Pages: 230-241

Dates

published

1 - 2 - 2011

online

24 - 9 - 2010

Contributors

author

Juraj Racko

• Slovak University of Technology, Ilkovičova 3, 812 19, Bratislava, Slovakia

author

Miroslav Mikolášek

• Slovak University of Technology, Ilkovičova 3, 812 19, Bratislava, Slovakia

author

Ralf Granzner

• Technical University of Ilmenau, PF 98684, Ilmenau, Germany

author

Juraj Breza

• Slovak University of Technology, Ilkovičova 3, 812 19, Bratislava, Slovakia

author

Daniel Donoval

• Slovak University of Technology, Ilkovičova 3, 812 19, Bratislava, Slovakia

author

Alena Grmanová

• Slovak University of Technology, Ilkovičova 3, 812 19, Bratislava, Slovakia

author

Ladislav Harmatha

• Slovak University of Technology, Ilkovičova 3, 812 19, Bratislava, Slovakia

author

Frank Schwierz

• Technical University of Ilmenau, PF 98684, Ilmenau, Germany

author

Karol Fröhlich

• Slovak Academy of Sciences, Dúbravská cesta 9, 841 04, Bratislava, Slovakia

References

• [1] J. Frenkel, Phys. Rev. 54, 647 (1938) http://dx.doi.org/10.1103/PhysRev.54.647[Crossref]
• [2] S.M. Sze, J. Appl. Phys. 38, 2951 (1967) http://dx.doi.org/10.1063/1.1710030[Crossref]
• [3] S.M. Sze, Physics of Semiconductors Devices, second edition (John Wiley & Sons, New York, 1981)
• [4] A. Schenk, Solid State Electron. 35, 1585 (1992) http://dx.doi.org/10.1016/0038-1101(92)90184-E[Crossref]
• [5] G.A.M. Hurkx, D.B.M. Klaassen, M.P.G. Knuvers, IEEE T. Electron Dev. 39, 331 (1992) http://dx.doi.org/10.1109/16.121690[Crossref]
• [6] B. Eitan, A. Kolodny, Appl. Phys. Lett. 43, 106 (1983) http://dx.doi.org/10.1063/1.94145[Crossref]
• [7] D. Ielmini, A.S. Spinelli, A.L. Lacaita, A. Martinelli, G. Ghidini, Solid State Electron. 45, 1361 (2001) http://dx.doi.org/10.1016/S0038-1101(01)00173-3[Crossref]
• [8] D.M. Sathaiya, S. Karmalkar, IEEE T. Electron Dev. 55, 557 (2008) http://dx.doi.org/10.1109/TED.2007.912993[Crossref]
• [9] D.M. Sathaiya, S. Karmalkar, J. Appl. Phys. 99, 093701 (2006) http://dx.doi.org/10.1063/1.2191620[Crossref]
• [10] S. Karmalkar, D.M. Sathaiya, Appl. Phys. Lett. 82, 3976 (2003) http://dx.doi.org/10.1063/1.1579852[Crossref]
• [11] S. Karmalkar, N. Satyan, D.M. Sathaiya, IEEE Electr. Device L. 27, 87 (2006) http://dx.doi.org/10.1109/LED.2005.862672[Crossref]
• [12] J. Racko et al., In: J. Präšek, M. Adémek, I. Szendiuch (Eds.), 32nd International Spring Seminar on Electronics Technology, 13–17 May 2009, Brno, Czech Republic (Brno University of Technology, Brno, 2009) 256
• [13] J. Racko et al., Solid State Electron. 52, 1755 (2008) http://dx.doi.org/10.1016/j.sse.2008.07.009[Crossref]
• [14] J. Racko et al., J. Electr. Eng. 59, 81 (2008)
• [15] K. Fröhlich et al., J. Vac. Sci. Technol. B 27, 266 (2009) http://dx.doi.org/10.1116/1.3021030[Crossref]

Identifiers

DOI

10.2478/s11534-010-0027-7