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Number of results
Journal
2008 | 6 | 4 | 792-796
Article title

On a current mechanism in Ta2O5 thin films

Content
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Languages of publication
EN
Abstracts
EN
Electrical conduction in the temperature range of 120–370 K has been studied in sandwiched structures of Al/Ta2O5/Si. The tantalum oxide films were prepared by evaporation of tantalum on a p-Si crystal substrate, followed by oxidation at a temperature of 600°C. The temperature-dependent current-voltage (I–V) characteristics are explained on the basis of a phonon-assisted tunnelling model. The same explanation is given for I–V data measured on Ta2O5 films by other investigators. From the comparison of experimental data with theory the density of states in the interface layer is derived and the electron-phonon interaction constant is assessed.
Publisher

Journal
Year
Volume
6
Issue
4
Pages
792-796
Physical description
Dates
published
1 - 12 - 2008
online
27 - 9 - 2008
Contributors
  • Department of Physics, Vilnius Pedagogical University, Studentu 39, LT-08106, Vilnius, Lithuania, pipiniai@takas.lt
  • Department of Physics, Vilnius Pedagogical University, Studentu 39, LT-08106, Vilnius, Lithuania, ftfdekanas@vpu.lt
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.-psjd-doi-10_2478_s11534-008-0113-2
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