On a current mechanism in Ta2O5 thin films

• Authors: Povilas Pipinys , Alfonsas Rimeika
• Languages of publication: EN

Abstracts

EN

Electrical conduction in the temperature range of 120–370 K has been studied in sandwiched structures of Al/Ta2O5/Si. The tantalum oxide films were prepared by evaporation of tantalum on a p-Si crystal substrate, followed by oxidation at a temperature of 600°C. The temperature-dependent current-voltage (I–V) characteristics are explained on the basis of a phonon-assisted tunnelling model. The same explanation is given for I–V data measured on Ta2O5 films by other investigators. From the comparison of experimental data with theory the density of states in the interface layer is derived and the electron-phonon interaction constant is assessed.

Keywords

EN

Ta2O5 ; Frenkel emission; phonon-assisted tunnelling

Discipline

• 72.80.Sk: Insulators
• 73.40.Gk: Tunneling(for tunneling in quantum Hall effects, see 73.43.Jn)
• 73.50.Fq: High-field and nonlinear effects

• Publisher: De Gruyter Open
• Journal: Open Physics
• Year: 2008
• Volume: 6
• Issue: 4
• Pages: 792-796

Dates

published

1 - 12 - 2008

online

27 - 9 - 2008

Contributors

author

Povilas Pipinys

• Department of Physics, Vilnius Pedagogical University, Studentu 39, LT-08106, Vilnius, Lithuania

author

Alfonsas Rimeika

• Department of Physics, Vilnius Pedagogical University, Studentu 39, LT-08106, Vilnius, Lithuania

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Identifiers

DOI

10.2478/s11534-008-0113-2