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2014 | 1 | 1 |

Article title

Focused Ion Beam nano-patterning from
traditional applications to single ion implantation



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In this article we review some fundamentals of
the Focused Ion Beam (FIB) technique based on scanning
finely focused beams of gallium ions over a sample to
perform direct writing. We analyse the main limitations
of this technique in terms of damage generation or local
contamination and through selected examples we discuss
the potential of this technique in the light of the most
sensitive analysis techniques. In particular we analyse
the limits of Ga-FIB irradiation for the patterning of III-V
heterostructures, thin magnetic layers, artificial defects
fabricated onto graphite or graphene and atomically thin
suspended membranes. We show that many of these earlypointed
“limitations” with appropriate attention and
analysis can be valuable for FIB instrument development,
avoided, or even turned into decisive advantages. Such
new methods transferable to the fabrication of devices
or surface functionalities are urgently required in the
emerging nanosciences applications and markets.








Physical description


1 - 1 - 2014
13 - 2 - 2014
26 - 6 - 2014
8 - 5 - 2014


  • LPN – CNRS, Route de
    Nozay, Marcoussis, France


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