EN
ZnO films deposited by Atomic Layer Deposition (ALD) method at different growth conditions have required electron concentrations and electron mobilities for applications as n-type partners to ptype CdTe (ZnO layers with a reduced free electron concentration) and the transparent conductive oxide (TCO, metallic ZnO films). In the latter case their electrical properties are comparable to those of ITO and ZnO:Al (AZO) films obtained by a sputtering. We also demonstrate that ZnO films deposited by the ALD are suitable for construction of hybrid structures (semiconductor/organic material) for applications in novel photovoltaic (PV) panels based on organic materials (PV cells of the third generation).