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Journal
International Journal of Electronics and Telecommunications
2019
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65
|
4
|
Article title
Ultra-low Power FinFET SRAM Cell with Improved Stability Suitable for Low Power Applications
Authors
Shilpi Birla
,
Shilpi Birla
Content
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Title variants
PL
Ultra-low Power FinFET SRAM Cell with Improved Stability Suitable for Low Power Applications
Languages of publication
EN
Abstracts
Keywords
EN
FinFET
RSNM
WSNM
Hold Margin
Subthreshold
Leakage Power
PL
Nauki Techniczne
Publisher
Polska Akademia Nauk
Journal
International Journal of Electronics and Telecommunications
Year
2019
Volume
65
Issue
4
Physical description
Contributors
author
Shilpi Birla
author
Shilpi Birla
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.oai-journals-pan-pl-113323
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