Characterization of Sn Films on Silicon by Slow Positron Implantation Spectroscopy

• Authors: N. Nancheva , P. Docheva , W. Anwand , G. Brauer
• Languages of publication: EN

Abstracts

EN

Sn films grown on silicon substrate by d.c. magnetron sputtering have been investigated by slow positron implantation spectroscopy. As the substrate bias is one of the most important factors affecting the structure of a sputtered film, films grown at various substrate bias (+80 V, 0 V, -80 V) are compared and their properties are discussed.

Keywords

EN

68.75.+x; 78.70.

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2001
• Volume: 99
• Issue: 3-4
• Pages: 435-440

Dates

published

2001-03/04

received

2000-09-18

Contributors

author

N. Nancheva

• Department of Physics, University of Rousse, 7017 Rousse, Bulgaria

author

P. Docheva

• Department of Physics, University of Rousse, 7017 Rousse, Bulgaria

author

W. Anwand

• Institut für Ionenstrahlphysik und Materialforschung, Forschungszentrum Rossendorf, Postfach 51 01 19, 01314 Dresden, Germany

author

G. Brauer

• Institut für Ionenstrahlphysik und Materialforschung, Forschungszentrum Rossendorf, Postfach 51 01 19, 01314 Dresden, Germany

References

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Identifiers

DOI

10.12693/APhysPolA.99.435