Hydrogen and its Complexes in Silicon

• Authors: L. Dobaczewski , K. Bonde Nielsen , K. Gosciñski , O. Andersen
• Languages of publication: EN

Abstracts

EN

In this study the technique of Laplace transform (high resolution) deep level transient spectroscopy combined with the uniaxial stress method has been used to study a symmetry and the defect reconfiguration kinetics (the stress induced alignment) of some forms of hydrogen-related centres. We have confirmed the trigonal symmetry of the defect related to the isolated bond centred hydrogen. When hydrogen decorates the vacancy-oxygen pair (the A centre) the apparent defect orthorhombic symmetry is not lowered as a result of a very high hydrogen jumping rate between two unsaturated broken bonds of the vacancy. We also show that the stress-induced defect alignment in some cases can be related to the same microscopic mechanism of the hydrogen motion as it is for the diffusion process.

Keywords

EN

73.40.Lq; 71.55.Cn; 68.55.Ln

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2000
• Volume: 98
• Issue: 3
• Pages: 231-239

Dates

published

2000-09

Contributors

author

L. Dobaczewski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

K. Bonde Nielsen

• Institute of Physics and Astronomy, University of Aarhus, Aarhus, Denmark

author

K. Gosciñski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

O. Andersen

• Institute of Physics and Astronomy, University of Aarhus, Aarhus, Denmark