Effect of Thermal Annealing on Optical Properties of Implanted Gaas

• Authors: M. Kulik , F. Komarov , D. Mączka
• Languages of publication: EN

Abstracts

EN

GaAs samples doped with indium atoms by ion implantation and thermal annealed were studied using a channelling method, Rutherford backscattering, and an ellipsometry. From these measurements it was observed that the layer implanted with 3×10^{16} cm^{-2} indium dose was totally damaged and its optical properties, namely a refraction index n and an extinction coefficient k, corresponded to the amorphous material. Subsequent isobaric heating of the implanted samples resulted in recovery of the crystalline structures with simultaneous change of the n and k index values.

Keywords

EN

07.60.Fs; 61.72.Vv; 78.20.-e

Discipline

• 07.60.Fs: Polarimeters and ellipsometers
• 78.20.-e: Optical properties of bulk materials and thin films(for optical properties related to materials treatment, see 81.40.Tv; for optical materials, see 42.70-a; for optical properties of superconductors, see 74.25.Gz; for optical properties of rocks and minerals, see 91.60.Mk; for optical properties of specific thin films, see 78.66.-w)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1999
• Volume: 96
• Issue: 1
• Pages: 131-135

Dates

published

1999-07

Contributors

author

M. Kulik

• Institute of Physics, Maria Curie-Skłodowska University, Pl. Marii Curie-Skłodowskiej 1, 20-031 Lublin, Poland

author

F. Komarov

• Institute of Physics, State University, Minsk, Republic of Byelorussia

author

D. Mączka

• Institute of Physics, Maria Curie-Skłodowska University, Pl. Marii Curie-Skłodowskiej 1, 20-031 Lublin, Poland

Identifiers

DOI

10.12693/APhysPolA.96.131