The Model for Luminescence Center Excitation in PbWO_{4}

• Authors: D. Millers , L. Grigorjeva , S. Chernov , V. Pankratov
• Languages of publication: EN

Abstracts

EN

The luminescence and transient absorption of PbWO_{4} crystals were studied. The electron beam (10 ns, E≈270 keV) was used as excitation source. The kinetics of luminescence is complicated - the prompt rise of luminescence intensity is followed by a slow (τ_{r}≈100 ns) rise. The luminescence decay at 80 K is nearly exponential with τ_{d}≈4.0- 4.5 μs. The decay kinetics of transient absorption at 3.5 eV can be described roughly by two exponents with time constants τ_{1}≈100 ns and τ_{2}≈4.0 μs. A common process responsible for absorption relaxation and luminescence rise is suggested. The luminescence center excitation occurs during recombination process via Pb^{2+} excited state formation and subsequent energy transfer to WO_{4}^{2-} group.

Keywords

EN

78.40.-q; 78.60.Ya; 61.72.Cc

Discipline

• 61.72.Cc: Kinetics of defect formation and annealing
• 78.40.-q: Absorption and reflection spectra: visible and ultraviolet(for infrared spectra, see 78.30.-j; for optical spectra of superconductors, see 74.25.nd; for time resolved reflection spectroscopy, see 78.47.jg; for multiphoton absorption, see 79.20.Ws in impact phenomena)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1999
• Volume: 95
• Issue: 6
• Pages: 971-976

Dates

published

1999-06

received

1998-07-23

(unknown)

1999-02-04

Contributors

author

D. Millers

• Institute of Solid State Physics, University of Latvia, 8 Kengaraga str., 1063, Riga, Latvia

author

L. Grigorjeva

• Institute of Solid State Physics, University of Latvia, 8 Kengaraga str., 1063, Riga, Latvia

author

S. Chernov

• Institute of Solid State Physics, University of Latvia, 8 Kengaraga str., 1063, Riga, Latvia

author

V. Pankratov

• Institute of Solid State Physics, University of Latvia, 8 Kengaraga str., 1063, Riga, Latvia

Identifiers

DOI

10.12693/APhysPolA.95.971