Role of the Thermal Stress on the Magnetophonon Peak Structure in the Parallel Transport of the GaAs/AlGaAs Multiple Quantum Wells

• Authors: G. Tomaka , J. Cebulski , E. Sheregii , W. Ściuk , W. Strupiński , L. Dobrzański
• Languages of publication: EN

Abstracts

EN

The magnetophonon resonance in parallel transport of two types multiple quantum wells was studied. The transverse magnetoresistance was measured in pulsed magnetic fields up to 30 T (within temperature region from 77 to 340 K). A fine structure of magnetophonon resonance peaks which depends on temperature and does not depend on the type of multiple quantum wells, was observed. This effect could be attributed to two phenomena: contribution of barrier phonons and influence of thermostresses.

Keywords

EN

78.66.Fd; 73.20.Dx

Discipline

• 78.66.Fd: III-V semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1998
• Volume: 94
• Issue: 3
• Pages: 597-602

Dates

published

1998-09

Contributors

author

G. Tomaka

• Institute of Physics of Pedagogical University, Rejtana 16a, 35-310 Rzeszów, Poland

author

J. Cebulski

• Institute of Physics of Pedagogical University, Rejtana 16a, 35-310 Rzeszów, Poland

author

E. Sheregii

• Institute of Physics of Pedagogical University, Rejtana 16a, 35-310 Rzeszów, Poland

author

W. Ściuk

• Institute of Physics of Pedagogical University, Rejtana 16a, 35-310 Rzeszów, Poland

author

W. Strupiński

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

L. Dobrzański

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

Identifiers

DOI

10.12693/APhysPolA.94.597