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1997 | 92 | 5 | 953-957

Article title

Exciton States in Type-II ZnSe/BeTe Quantum Wells

Content

Title variants

Languages of publication

EN

Abstracts

EN
We present an optical investigation of novel heterostructures based on beryllium chalcogenides with a type-I and type-II band alignment. In the type-II quantum well structures (ZnSe/BeTe) we observed a strong exciton transition involving an electron confined in the conduction band well and a hole localized in the valence band barrier (both in ZnSe layer). This transition is drastically broadened by the temperature increase due to enhanced exciton-acoustic phonon interaction.

Keywords

EN

Year

Volume

92

Issue

5

Pages

953-957

Physical description

Dates

published
1997-11

Contributors

author
  • A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia
author
  • A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia
author
  • Physikalisches Institut der Universität Würzburg, 97074 Würzburg, Germany
  • A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia
author
  • Physikalisches Institut der Universität Würzburg, 97074 Würzburg, Germany
author
  • Physikalisches Institut der Universität Würzburg, 97074 Würzburg, Germany
author
  • Physikalisches Institut der Universität Würzburg, 97074 Würzburg, Germany
author
  • Physikalisches Institut der Universität Würzburg, 97074 Würzburg, Germany
author
  • Physikalisches Institut der Universität Würzburg, 97074 Würzburg, Germany

References

Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv92z522kz
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