Enhanced Exciton-Phonon Interaction in Strained ZnCdSe/ZnSe Quantum Well Structures

• Authors: M. Godlewski , K. Leonardi , D. Hommel
• Languages of publication: EN

Abstracts

EN

Radiative recombination processes in pseudomorphic ZnCdSe/ZnSe structures are compared to those observed in strain-relaxed structures grown on GaAs substrates with thick ZnSe buffer layers. From the temperature dependence of the photoluminescence line width we evaluate the strength of exciton-phonon interaction with acoustic (dominant at lower temperatures) and optical phonons. Stronger exciton-phonon interaction is observed for pseudomorphic structures. Such enhanced exciton-phonon interaction is likely responsible for a faster photoluminescence deactivation at increased temperatures. We also report different exciton properties (photoluminescence intensity, width, strength of exciton-phonon interaction) in quantum well of a given width but in structures grown with different order of quantum wells. More stable photoluminescence (with increasing temperature) is observed for a given quantum well if it is closer to the buffer layer and not to the cap layer.

Keywords

EN

68.60.-p; 76.70.Hb

Discipline

• 68.60.-p: Physical properties of thin films, nonelectronic
• 76.70.Hb: Optically detected magnetic resonance (ODMR)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1997
• Volume: 92
• Issue: 4
• Pages: 769-773

Dates

published

1997-10

Contributors

author

M. Godlewski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

K. Leonardi

• Institute of Solid State Physics, Bremen University, 28334 Bremen, Germany

author

D. Hommel

• Institute of Solid State Physics, Bremen University, 28334 Bremen, Germany

Identifiers

DOI

10.12693/APhysPolA.92.769