Elastooptic Constants of SrLaAlO_{4} and SrLaGaO_{4} Single Crystals Determined by Brillouin Scattering

• Authors: M. Drozdowski , A. Pajączkowska , D. Kasprowicz , P. Ziobrowski , A. Gloubokov
• Languages of publication: EN

Abstracts

EN

In this paper we report the elastooptic constants p_{ij} of strontium lanthanum aluminate, SrLaAlO_{4} and strontium lanthanum gallate SrLaGaO_{4} single crystals, which were determined at room temperature using Brillouin scattering method. In order to investigate the elastooptic constants of SrLaAlO_{4} and SrLaGaO_{4} single crystals, a substitution method proposed by Cummins and Schoen, and developed by Nelson and Lax was used. The obtained results are also discussed in terms of the nature defects which might arise in these crystals during growth process.

Keywords

EN

33.20.Fb; 78.35.+c; 63.20.-e

Discipline

• 63.20.-e: Phonons in crystal lattices(for phonons in superconductors, see 74.25.Kc; see also 43.35.Gk Phonons in crystal lattice, quantum acoustics—in Acoustics Appendix)
• 33.20.Fb: Raman and Rayleigh spectra (including optical scattering)
• 78.35.+c: Brillouin and Rayleigh scattering; other light scattering(for Raman scattering, see 78.30.-j; for time resolved light scattering spectroscopy, see 78.47.je)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1997
• Volume: 92
• Issue: 1
• Pages: 177-181

Dates

published

1997-07

Contributors

author

M. Drozdowski

• Institute of Physics, Poznań University of Technology, Piotrowo 3, 60-965 Poznań, Poland

author

A. Pajączkowska

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

author

D. Kasprowicz

• Institute of Physics, Poznań University of Technology, Piotrowo 3, 60-965 Poznań, Poland

author

P. Ziobrowski

• Institute of Physics, Poznań University of Technology, Piotrowo 3, 60-965 Poznań, Poland

author

A. Gloubokov

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.92.177