X-Ray Structure Perfection Diagnostics of Slightly Distorted Silicon Crystals in the Bragg Case of Diffraction

• Authors: V. Khrupa , S. Krasulya , V. Machulin , L. Datsenko , J. Auleytner
• Languages of publication: EN

Abstracts

EN

A new approach to structure perfection diagnostics of dislocation-free silicon crystals has been developed using the Bragg case of diffraction. The approach is being based on successive measurements of integral reflectivity and the spatial intensity distribution of reflected beam on the same diffraction planes of a real crystal by means of a single crystal diffractometer.

Keywords

EN

61.66.Bi; 81.40.-z

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1997
• Volume: 91
• Issue: 5
• Pages: 981-985

Dates

published

1997-05

Contributors

author

V. Khrupa

• Department of Physics, Science Laboratories, University of Durham, South Road, Durham, DH1 3LE, U.K.

author

S. Krasulya

• Institute of Semiconductor Physics of the National Academy of Sciences, Kiev, Ukraine

author

V. Machulin

• Institute of Semiconductor Physics of the National Academy of Sciences, Kiev, Ukraine

author

L. Datsenko

• Institute of Semiconductor Physics of the National Academy of Sciences, Kiev, Ukraine

author

J. Auleytner

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland