Strain Relaxation Induced Red Shift of Photoluminescence of CdZnSe/ZnSe Quantum Wires

• Authors: H. Straub , G. Brunthaler , W. Faschinger , G. Bauer , C. Vieu
• Languages of publication: EN

Abstracts

EN

Wire patterns (80-1000 nm) of molecular beam epitaxy grown Cd_{0.2}Zn_{0.8}Se/ZnSe quantum well were fabricated by a CH_{4}/H_{2} reactive ion etching technique. Photoluminescence emission shows with decreasing lateral size a broadening of line shape and a spectral red shift. Calculations for the change of the band gap due to strain relaxation show that this shift of the photoluminescence emission for narrow Cd_{0.2}Zn_{0.8}Se/ZnSe structures (lattice mismatch of 1.34%) can be explained by a partial elastic strain relaxation of the biaxially compressively strained Cd_{0.2}Zn_{0.8}Se quantum well after the patterning process.

Keywords

EN

78.55.Et

Discipline

• 78.55.Et: II-VI semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1996
• Volume: 90
• Issue: 5
• Pages: 1085-1089

Dates

published

1996-11

Contributors

author

H. Straub

• Institut für Halbleiterphysik, Universität Linz, 4040 Linz, Austria

author

G. Brunthaler

• Institut für Halbleiterphysik, Universität Linz, 4040 Linz, Austria

author

W. Faschinger

• Institut für Halbleiterphysik, Universität Linz, 4040 Linz, Austria

author

G. Bauer

• Institut für Halbleiterphysik, Universität Linz, 4040 Linz, Austria

author

C. Vieu

• Laboratoire des Microstructures et de Microélectronique CNRS, 196 Avenue H. Ravera, 92225 Bagneux, France

Identifiers

DOI

10.12693/APhysPolA.90.1085