Experimental Control of the Number of Ionized Donors in an AlGaAs/GaAs Heterostructure

• Authors: P. Denk , T. Schlösser , K. Ensslin , M. Holland
• Languages of publication: EN

Abstracts

EN

The high mobility of electrons in AlGaAs-GaAs heterostructures relies on the concept of modulation doping. As a sample is cooled down to T = 4.2 K under a fixed gate bias the number of ionized donors can be frozen and is then independent on the gate potential. We discuss the consequences of this procedure on the electron density and mobility in a two-dimensional electron gas. For a laterally patterned sample we find that the amplitude of the potential modulation can be maximized for a given carrier density by a suitably chosen cool-down voltage.

Keywords

EN

73.50.Jt; 73.20.Dx; 03.65.Sq

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 88
• Issue: 5
• Pages: 977-981

Dates

published

1995-11

Contributors

author

P. Denk

• Sektion Physik, LMU München, 80539 München, Germany

author

T. Schlösser

• Sektion Physik, LMU München, 80539 München, Germany

author

K. Ensslin

• Sektion Physik, LMU München, 80539 München, Germany

author

M. Holland

• Dept. of Electronics, University of Glasgow, United Kingdom