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Number of results
1995 | 88 | 5 | 861-864

Article title

Growth of GaN Metalorganic Chemical Vapour Deposition Layers on GaN Single Crystals

Content

Title variants

Languages of publication

EN

Abstracts

EN
The homoepitaxial growth of GaN layers has been achieved for the first time. Bulk GaN single crystals which have been used as a substrate have been grown from diluted solution of atomic nitrogen in the liquid gallium at 1600°C and at nitrogen pressure of about 15-20 kbar. It is shown that a terrace growth of GaN epitaxial layer has been realized. The high quality of the GaN film has been confirmed by luminescence measurements. The analysis of donor-acceptor and exciton luminescence is presented.

Keywords

EN

Year

Volume

88

Issue

5

Pages

861-864

Physical description

Dates

published
1995-11

Contributors

author
  • Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warszawa, Poland
  • Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warszawa, Poland
  • Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warszawa, Poland
author
  • Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warszawa, Poland
author
  • High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland
author
  • High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland
author
  • High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences Al. Lotników 32/46, 02-668 Warszawa, Poland
  • Chemistry Department, Warsaw Technical University, Koszykowa 75, 00-662 Warszawa, Poland

References

Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv88z510kz
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