Photoluminescence Study of GaN

• Authors: X. Zhang , P. Kung , A. Saxler , D. Walker , Τ. Wang , M. Razeghi
• Languages of publication: EN

Abstracts

EN

Photoluminescence study of undoped, doped GaN grown on (00.1), (11.0), (01.2)Al_{2}O_{3} (100), (111)Si, and (00.1)6H-SiC substrates have been conducted. Strong bandedge emissions from all undoped samples and dopant­-related emissions from doped samples were observed. Deep-level yellow emis­sion centered around 2.2 eV was not observed from undoped GaN grown on 6H-SiC substrate, undoped GaN with optimum Ga source flow and doped GaN. The experiment data strongly suggest that Ga vacancies are the origin this deep-level emission.

Keywords

EN

78.66.-w; 71.55.Eq; 68.55.-a

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 88
• Issue: 4
• Pages: 601-606

Dates

published

1995-10

Contributors

author

X. Zhang

• Center for Quantum Devices, Department of Electrical Engineering and Computer Science Northwestern University, Evanston. IL 60208, USA

author

P. Kung

• Center for Quantum Devices, Department of Electrical Engineering and Computer Science Northwestern University, Evanston. IL 60208, USA

author

A. Saxler

• Center for Quantum Devices, Department of Electrical Engineering and Computer Science Northwestern University, Evanston. IL 60208, USA

author

D. Walker

• Center for Quantum Devices, Department of Electrical Engineering and Computer Science Northwestern University, Evanston. IL 60208, USA

author

Τ. Wang

• Center for Quantum Devices, Department of Electrical Engineering and Computer Science Northwestern University, Evanston. IL 60208, USA

author

M. Razeghi

• Center for Quantum Devices, Department of Electrical Engineering and Computer Science Northwestern University, Evanston. IL 60208, USA