SiGe: A Promise into Reality?

• Authors: H.G. Grimmeiss , J. Olajos , J. Engval
• Languages of publication: EN

Abstracts

EN

The paper summarizes a few basic properties of SiGe showing that SiGe is an interesting material for high speed electronics. The advantage of using heterostructures in silicon-based technologies is demonstrated by taking SiGe heterobipolar transistors as an example. First results obtained with very fast and low-noise heterobipolar transistors are briefly mentioned. The paper is concluded by a short discussion of a few optoelectronic properties observed in various Si/Ge and Si/Si_{1-x}Ge_{x} strained-layer superlattices and quantum wells with particular emphasis on electroluminescence properties.

Keywords

EN

71.55.Cn

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 88
• Issue: 4
• Pages: 567-580

Dates

published

1995-10

Contributors

author

H.G. Grimmeiss

• Department of Solid State Physics, University of Lund, Box 118, 221 00 Lund, Sweden

author

J. Olajos

• Department of Solid State Physics, University of Lund, Box 118, 221 00 Lund, Sweden

author

J. Engval

• Department of Solid State Physics, University of Lund, Box 118, 221 00 Lund, Sweden