Electrical and Optical Properties of Highly Non-stoichiometric GaAs

• Authors: A. Kurpiewski , K. Korona , M. Kamińska , M. Palczewska , C. Jagadish , J. Williams
• Languages of publication: EN

Abstracts

EN

The studies of transport and optical properties of GaAs implanted with high arsenic doses were performed. As-implanted samples showed hopping conductivity and the exponential absorption tail in the near-IR region. Both effects were probably caused by the amorphization of implanted layer. Using EPR measurements it was found that arsenic antisite defect with high local strain field was created during implantation. Annealing of implanted layers at 600°C led to substantial removal of amorphization, decrease in absorp­tion coefficient and hopping conductivity leading to resistive samples. The possible model of such behaviour may be similar to the one of suggested for low temperature GaAs layers.

Keywords

EN

73.90.+f; 78.30.Er

Discipline

• 78.30.Er: Solid metals and alloys
• 73.90.+f: Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures (Restricted to new topics in section 73)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 87
• Issue: 2
• Pages: 518-522

Dates

published

1995-02

Contributors

author

A. Kurpiewski

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

K. Korona

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

M. Kamińska

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

M. Palczewska

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

author

C. Jagadish

• Department of Electronic Materials and Engineering, Australian National University, Canberra, Australia

author

J. Williams

• Department of Electronic Materials and Engineering, Australian National University, Canberra, Australia

Identifiers

DOI

10.12693/APhysPolA.87.518