Formation Energy and Electronic Structure of II-VI/IV Semiconductor Superlattices

• Authors: C. Jędrzejek , J. Konior , S. Kaprzyk
• Languages of publication: EN

Abstracts

EN

We calculate formation energy and electronic structure of ultrathin (001)II-VI/IV semiconductor superlattices using the Korringa-Kohn-Rosto­ker all-electron method. Formation energies (∆H) are 2.18 eV for (Ge_{2})_{1}(ZnSe)_{1} and 1.50 eV for (ZnS)_{1}(Si_{2})_{1}. The results of this work are significantly different from these by Ferraz and Srivastava who obtained ∆H = 0.88 eV for (001)(Ge_{2})_{1}(ZnSe)_{1} and moreover the one-layer super-lattices are metallic, which confirms the results by Ohno and Ito. The large formation energies surely lead to interfacial instability.

Keywords

EN

73.20.Dx

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 87
• Issue: 2
• Pages: 349-352

Dates

published

1995-02

Contributors

author

C. Jędrzejek

• Institute of Physics, Jagiellonian University, Reymonta 4, 30-059 Kraków, Poland

author

J. Konior

• Institute of Physics, Jagiellonian University, Reymonta 4, 30-059 Kraków, Poland

author

S. Kaprzyk

• Institute of Physics and Nuclear Techniques, Technical University AGH, Al. Mickiewicza 30, 30-060 Kraków, Poland

Identifiers

DOI

10.12693/APhysPolA.87.349