Alloy Splitting of the Te-DX States in Al_{x}Ga_{1-x}As

• Authors: G. Ostermayer , W. Jantsch , D. Dobosz , Z. Żytkiewicz , Z. Wilamowski
• Languages of publication: EN

Abstracts

EN

We report investigations of the Hall effect and conductivity of Te doped Al_{x}Ga_{1-x}As (x = 0.3). After illumination at low temperature, the conductivity decreases in two steps on warming. These steps are explained in terms of the two sets of energy levels associated with two types of Te-DX centers depending on the neighboring host cation (Ga or Al) which undergoes the 1attice relaxation. The observed persistent increase in mobility is also explained in terms of the two different capture barriers.

Keywords

EN

71.55.Eq; 72.80.Ey

Discipline

• 72.80.Ey: III-V and II-VI semiconductors
• 71.55.Eq: III-V semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1993
• Volume: 84
• Issue: 4
• Pages: 769-772

Dates

published

1993-10

Contributors

author

G. Ostermayer

• Institut für Experimentalphysik, Johannes Kepler Universität, 4040 Linz, Austria

author

W. Jantsch

• Institut für Experimentalphysik, Johannes Kepler Universität, 4040 Linz, Austria

author

D. Dobosz

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 00-668 Warszawa, Poland

author

Z. Żytkiewicz

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 00-668 Warszawa, Poland

author

Z. Wilamowski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 00-668 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.84.769