Electron Spin Resonance Studies of Te Doped AlGaAs Epilayers

• Authors: M. Surma , M. Godlewski , Z. Żytkiewicz
• Languages of publication: EN

Abstracts

EN

Results of electron spin resonance studies of tellurium doped AlGaAs epilayers are presented. We demonstrate a new approach to the studies of shallow donor-deep DX level transformation upon illumination or with an increase in temperature. The processes can be monitored by observing the changes of magnitude of an unidentified ESR signal of AlGaAs.

Keywords

EN

76.30.Lh; 71.55.Eq; 71.25.Mg

Discipline

• 71.55.Eq: III-V semiconductors
• 76.30.Lh: Other ions and impurities

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1992
• Volume: 82
• Issue: 5
• Pages: 817-820

Dates

published

1992-11

Contributors

author

M. Surma

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

M. Godlewski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

Z. Żytkiewicz

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.82.817