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1992 | 82 | 5 | 797-800

Article title

Energy Spectrum in Quantum Dots of Lead and Tin Chalcogenides Semiconducting Compounds

Content

Title variants

Languages of publication

EN

Abstracts

EN
The energy spectrum of a quantum dot made from IV-VI narrow gap semiconductors is studied. The calculations of the energy levels as functions of the dot radius are performed. When the anisotropy of the bare energy spectrum is strong, the energy levels are calculated using Fal'kovskii's adiabatic approximation for multiband systems. When the quantum dot material has an inverted band gap with respect to the host, the low-energy states within the fundamental gap are shown to arise.

Keywords

EN

Year

Volume

82

Issue

5

Pages

797-800

Physical description

Dates

published
1992-11

Contributors

author
  • Chernovtsy Department of the Institute of Materials Science Problems, Ukrainian Academy of Sciences, I. Wilde 5, 274001 Chernovtsy, Ukraine
author
  • Chernovtsy Department of the Institute of Materials Science Problems, Ukrainian Academy of Sciences, I. Wilde 5, 274001 Chernovtsy, Ukraine
author
  • Chernovtsy Department of the Institute of Materials Science Problems, Ukrainian Academy of Sciences, I. Wilde 5, 274001 Chernovtsy, Ukraine
author
  • Institute of Radiophysics and Electronics, Ukrainian Academy of Sciences, Acad. Proskura 12, 310085 Kharkov, Ukraine
  • Institute of Radiophysics and Electronics, Ukrainian Academy of Sciences, Acad. Proskura 12, 310085 Kharkov, Ukraine
  • Technical University of Poznań, Piotrowo 3, 60-965 Poznań, Poland

References

Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv82z519kz
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