Effect of Surface Orientation of the Substrate on the Saturation State of Solution during Liquid Phase Heteroepitaxy

• Authors: J. Olchowik
• Languages of publication: EN

Abstracts

EN

Orientation effects during heteroepitaxy appear at the stage of the layer formation and also during the isothermal contact of the multicomponent solution with the binary substrate. In the paper, the analysis of the InP and GaP substrate orientation on the state of liquid phase was carried out. The analysis based on the in situ comparative determination of the contact supersaturation of the Ga-In-P-As and Ga-In-P solutions. It was found that the contact supersaturation of the alloy was connected with the coupling mechanism of the interface with the binary substrate.

Keywords

EN

68.55.-a

Discipline

• 68.55.-a: Thin film structure and morphology(for methods of thin film deposition, film growth and epitaxy, see 81.15.-z)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1992
• Volume: 82
• Issue: 5
• Pages: 745-748

Dates

published

1992-11

Contributors

author

J. Olchowik

• Technical University of Lublin, Department of Physics, Nadbystrzycka 38, 20-618 Lublin, Poland

Identifiers

DOI

10.12693/APhysPolA.82.745