On Trap Generation in SiO_{2} Films of Si MOSFETS by Hot Electrons

• Authors: I. Strzałkowski , M. Marczewski , M. Kowalski , C. Jastrzębski , A. Bąkowski
• Languages of publication: EN

Abstracts

EN

Trap generation in amorphous SiO_{2} films with thickness about 500 Å was studied by nonavalanche injection of hot electrons. The trap density, the electron capture cross-section of native and generated traps and the effective trap generation constant for the oxide fields of 1-4 MV/cm, injected charge density up to 3 × 10^{19} e/cm^{-2} and injected current density in the range 2-300 μA/cm^{2} were determined and discussed.

Keywords

EN

72.20.Jv; 73.40.Qv; 73.60.Hy

Discipline

• 73.40.Qv: Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
• 72.20.Jv: Charge carriers: generation, recombination, lifetime, and trapping

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1992
• Volume: 82
• Issue: 4
• Pages: 685-688

Dates

published

1992-10

Contributors

author

I. Strzałkowski

• Institute of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warszawa, Poland

author

M. Marczewski

• Institute of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warszawa, Poland

author

M. Kowalski

• Institute of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warszawa, Poland

author

C. Jastrzębski

• Institute of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warszawa, Poland

author

A. Bąkowski

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.82.685