A New Type of Semi-Insulating Materials

• Authors: R. Leon , E. Weber
• Languages of publication: EN

Abstracts

EN

The introduction of Cu in InP at 700°C and higher temperatures results in both initially p-type and n-type InP become semi-insulating. It is also observed that thermally stable In-Cu rich precipitates form, that the concentration of deep levels is negligible and that InP:Cu samples exhibit inhomogeneities and anomalous transport behavior. The buried Schottky barrier model is the only model thus far studied which is consistent with these experimental observations. This model has general applicability, and its possible relevance to other semiconductors is examined. The conditions necessary for forming quasi-intrinsic semiconductors by metallic precipitation are discussed.

Keywords

EN

72.80.Ey

Discipline

• 72.80.Ey: III-V and II-VI semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1992
• Volume: 82
• Issue: 4
• Pages: 664-669

Dates

published

1992-10

Contributors

author

R. Leon

• Department of Materials Science, University of California, Berkeley, CA 94720, USA
• Materials Science Division, Lawrence Berkeley Laboratory, Berkeley, CA 94720, USA

author

E. Weber

• Department of Materials Science, University of California, Berkeley, CA 94720, USA
• Materials Science Division, Lawrence Berkeley Laboratory, Berkeley, CA 94720, USA

Identifiers

DOI

10.12693/APhysPolA.82.664