Optical Bistability Due to Photo-Induced Charge Transfer in a Type-II GaAs/AlAs Quantum Well

• Authors: R. Teissier , R. Planel , F. Mollot
• Languages of publication: EN

Abstracts

EN

We present a bistability of low temperature photoluminescence in a n-i-n type-II GaAs/AlAs quantum heterostructure. Spectral analysis and electrical measurements indicate that the two states correspond to hole accumulation in different layers. The transition occurs with the alignment of electronic Γ and X states due to optical pumping, and no external voltage bias is needed.

Keywords

EN

78.55.Cr; 42.65.Pc; 72.20.Jv

Discipline

• 78.55.Cr: III-V semiconductors
• 42.65.Pc: Optical bistability, multistability, and switching, including local field effects(see also 42.60.Gd Q-switching; 42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks)
• 72.20.Jv: Charge carriers: generation, recombination, lifetime, and trapping

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1992
• Volume: 82
• Issue: 4
• Pages: 656-659

Dates

published

1992-10

Contributors

author

R. Teissier

• Laboratoire de Microstructures et Microélectronique-CNRS, 196, av. H. Ravera, 92220 Bagneux, France

author

R. Planel

• Laboratoire de Microstructures et Microélectronique-CNRS, 196, av. H. Ravera, 92220 Bagneux, France

author

F. Mollot

• Laboratoire de Microstructures et Microélectronique-CNRS, 196, av. H. Ravera, 92220 Bagneux, France

Identifiers

DOI

10.12693/APhysPolA.82.656