Very Thin Silver Layer Growth on the Cu(1II) Face at Different Temperatures

• Authors: S. Mróz , B. Stachnik
• Languages of publication: EN

Abstracts

EN

Measurements of work function changes (ΔΦ) and Auger Electron Spectroscopy were used for investigation of very thin silver layer adsorption on the (111) face of copper crystal. At room temperature the layer-by-layer growth was observed while at temperatures above 850 K ΔΦ and the Auger peak height kinetics indicated the presence of silver diffusion to the surface layer of the copper sample.

Keywords

EN

68.35.-p; 68.55.-a

Discipline

• 68.55.-a: Thin film structure and morphology(for methods of thin film deposition, film growth and epitaxy, see 81.15.-z)
• 68.35.-p: Solid surfaces and solid-solid interfaces: structure and energetics

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1992
• Volume: 81
• Issue: 2
• Pages: 233-238

Dates

published

1992-02

received

1991-05-22

(unknown)

1991-07-17

Contributors

author

S. Mróz

• Institute of Experimental Physics, University of Wrocław, Cybulskiego 36, 50-205 Wrocław

author

B. Stachnik

• Institute of Experimental Physics, University of Wrocław, Cybulskiego 36, 50-205 Wrocław

Identifiers

DOI

10.12693/APhysPolA.81.233