Pulsed Laser Evaporation and Epitaxy

• Authors: J. Dubowski
• Languages of publication: EN

Abstracts

EN

The application of pulsed lasers for vaporization (ablation) of solid targets appears to be the most natural way to produce high purity fluxes of atoms/ions suitable for epitaxial growth of thin films. Since the early 1960's this unique approach has been the subject of steadily growing interest in the deposition of metals, dielectrics, semiconductors and since 1987, high-T_{c} superconductors. Laser induced target surface morphology changes, properties of laser induced vapours and pulsed deposition rate associated with the use of a pulsed laser for vacuum epitaxy are discussed. A pulsed laser evaporation and epitaxy (PLEE) system is described and the results of PLEE application for the growth of Cd_{1-x}Mn_{x}Te and CdTe-Cd_{1-x}Mn_{x}Te quantum well and superlattice structures are reviewed. Feasibility of PLEE in bandgap engineering is also discussed.

Keywords

EN

68.55.-a; 78.65.Fa

Discipline

• 68.55.-a: Thin film structure and morphology(for methods of thin film deposition, film growth and epitaxy, see 81.15.-z)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1991
• Volume: 80
• Issue: 2
• Pages: 221-244

Dates

published

1991-08

Contributors

author

J. Dubowski

• Institute for Microstructural Sciences, National Research Council Canada, Ottawa, Ontario, K1A 0R6, Canada

Identifiers

DOI

10.12693/APhysPolA.80.221