Current-Voltage Characteristic of Semi-Insulating GaAs, with Trap-Filling Effect

• Authors: K. Karpińska , J. Łusakowski
• Languages of publication: EN

Abstracts

EN

A detailed investigation of current-voltage (I- V)characteristics of semi-insulating GaAs sample was performed in the vicinity of room temperature. The sample with 300 K resistivity of 2 x 10^{7} Ω cm was supplied with guard-ring electrodes which allowed the elimination of surface currents. The observed characteristics started with an ohmic part which was followed by a superlinear current on voltage dependence. At a threshold voltage V_{t}h which corresponds to the electric field of about 2 kV/cm the current increased abruptly by a few orders of magnitude. The value of V_{t}h increased with the temperature. It is proposed that the observed shape of the I-V curve is caused by the filling of the EL2 level with injected electrons heated by the electric field.

Keywords

EN

72.20.Jv

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1991
• Volume: 79
• Issue: 2-3
• Pages: 281-285

Dates

published

1991-02

received

1990-08-08

Contributors

author

K. Karpińska

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

J. Łusakowski

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland