New Electrical characterization of the Metal-Semiconductor Interface in GaAs Schottky Junctions

• Authors: Zs. J. Horváth
• Languages of publication: EN

Abstracts

EN

The new possibilities of the electrical characterization of the metal-semiconductor interface in Schottky junctions are briefly outlined and demonstrated by using an example of experimental results taken from the literature. The interface parameters obtained for GaAs Schottky junctions with different metallizations are summarized.

Keywords

EN

73.30.+y

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1991
• Volume: 79
• Issue: 2-3
• Pages: 167-170

Dates

published

1991-02

received

1990-08-08

Contributors

author

Zs. J. Horváth

• Research Institute for Technical Physics, Hungarian Academy of Sciences, Budapest, P.O.Box 76, H-1325, Hungary