Acceptor-Like Level of the EL2 Defect in its Metastable Configuration

• Authors: P. Dreszer , M. Baj , A. Babiński
• Languages of publication: EN

Abstracts

EN

This paper presents for the first time the evident experimental confirmation that EL2 defect, while being in its metastable configuration, traps under hydrostatic pressure an additional electron, i.e. the acceptor-like (EL2*)^{0/-} level enters the energy gap under pressure. We propose that in n-GaAs the EL2 thermal recovery takes always place via the (EL2*)^{-} state.

Keywords

EN

71.55.Eq; 78.50.Ge

Discipline

• 71.55.Eq: III-V semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1991
• Volume: 79
• Issue: 1
• Pages: 129-132

Dates

published

1991-01

received

1990-08-08

Contributors

author

P. Dreszer

• High Pressure Research Center "Unipress", Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland

author

M. Baj

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

A. Babiński

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.79.129