Effect of Current Annealing on Domain Structure in Amorphous and Nanocrystalline FeCoMoB Microwires

• Authors: P. Klein , R. Varga , J. Onufer , J. Ziman , G. Badini-Confalonieri , M. Vazquez
• Languages of publication: EN

Abstracts

EN

The influence of current annealing on the complex domain structure in amorphous and nanocrystalline FeCoMoB microwire has been studied. The thickness of radial domain structure together with the switching field of single domain wall change as a consequence of variation of complex internal stress distribution inside metallic core. Firstly, radial domain structure thickness monotonously increases with increasing annealing DC current density for amorphous state. Switching field exhibits local minimum in nanocrystalline sample annealed at 500 MA/m^2 for 10 min when the lowest thickness of outer shell (182 nm) was observed. Such annealed sample (which magnetic properties exhibit excellent temperature stability) is suitable candidate for miniaturized sensor construction for sensing the magnetic field or mechanical stress.

Keywords

EN

75.50.Kj; 75.60.Ej; 75.60.Jk; 75.70.Kw; 75.60.Ch

Discipline

• 75.60.Ch: Domain walls and domain structure(for magnetic bubbles and vortices, see 75.70.Kw)
• 75.60.Jk: Magnetization reversal mechanisms
• 75.70.Kw: Domain structure (including magnetic bubbles and vortices)(for domain structure in ferroelectricity and antiferroelectricity, see 77.80.Dj)
• 75.60.Ej: Magnetization curves, hysteresis, Barkhausen and related effects(for hysteresis in ferroelectricity, see 77.80.Dj)
• 75.50.Kj: Amorphous and quasicrystalline magnetic materials

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2017
• Volume: 131
• Issue: 4
• Pages: 681-683

Dates

published

2017-04

Contributors

author

P. Klein

• RVmagnetics a.s., Hodkovce 21, 04421 Košice, Slovakia

author

R. Varga

• RVmagnetics a.s., Hodkovce 21, 04421 Košice, Slovakia
• Institute of Physics, Faculty of Sciences, P.J. Safarik University, Park Angelinum 9, 041 54 Košice, Slovakia

author

J. Onufer

• Department of Physics, FEEI, TUKE, Park Komenského 2, 042 00 Košice, Slovakia

author

J. Ziman

• Department of Physics, FEEI, TUKE, Park Komenského 2, 042 00 Košice, Slovakia

author

G. Badini-Confalonieri

• Institute of Material Science of Madrid, CSIC, 28049 Madrid, Spain

author

M. Vazquez

• Institute of Material Science of Madrid, CSIC, 28049 Madrid, Spain

References

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Identifiers

DOI

10.12693/APhysPolA.131.681