Raman Scattering Characterization of Mo_xW_{1-x}S₂ Layered Mixed Crystals

• Authors: M. Sigiro
• Languages of publication: EN

Abstracts

EN

A series of Mo_xW_{1-x}S₂ (0 ≤ x ≤1) layered mixed crystals was grown by the chemical vapor transport method. A systematic study of these crystals was then conducted using the Raman scattering measurements. The peaks of the two dominant first-order Raman-active modes, A_{1g} and E¹_{2g}, and of several second-order bands are observed from 150 cm¯¹ to 500 cm¯¹. The peaks corresponding to A_{1g} mode show one-mode type behavior, whereas the peaks of E¹_{2g} mode demonstrate two-mode type behavior for the entire series. These results can be explained by the atomic displacements of each mode. For A_{1g} mode, only S atoms vibrate, thereby resulting in a one-mode type behavior for the mixed crystals. For E¹_{2g} mode, metal and S atoms vibrate. The mass difference in the vibrating Mo and W cations causes the two-mode type behavior of E¹_{2g} mode. In addition, the largest asymmetry and broadening of A_{1g} mode for Mo_{0.5}W_{0.5}S₂ is attributed to random alloy scattering.

Keywords

EN

Raman-active mode; layered mixed crystal; atomic displacement; chemical-vapor transport method

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2017
• Volume: 131
• Issue: 2
• Pages: 259-262

Dates

published

2017-02

received

2016-08-31

(unknown)

2017-01-05

Contributors

author

M. Sigiro

• Department of Physics Education, Faculty of Education and Teacher Training, Universitas HKBP Nomensen, Medan 20234, Indonesia

References

• [1] J.A. Wilson, A.D. Yoffe, Adv. Phys. 18, 193 (1969), doi: 10.1080/00018736900101307
• [2] E.S. Kadantsev, P. Hawrylak, Solid State Commun. 152, 909 (2012), doi: 10.1016/j.ssc.2012.02.005
• [3] J.M. Martin, C. Donnet, J.L. Mogne, Phys. Rev. B 48, 10583 (1993), doi: 10.1103/PhysRevB.48.10583
• [4] M. Yanagisawa, Wear 168, 167 (1993), doi: 10.1016/0043-1648(93)90213-6
• [5] P.D. Fleuschauer, Thin Solid Films 154, 309 (1987), doi: 10.1016/0040-6090(87)90375-0
• [6] H. Tributsch, Z. Nat.forsch. A 32, 972 (1977), doi: 10.1515/zna-1977-0911
• [7] K.K. Kam, B.A. Parkinson, J. Phys. Chem. 86, 463 (1982), doi: 10.1021/j100393a010
• [8] S.J. Li, J.C. Bernede, J. Pouze, M. Jamali, J. Phys. Condens. Matter 8, 2291 (1996), doi: 10.1088/0953-8984/8/14/006
• [9] A. Jager-Waldau, M. Lux-Steiner, R. Jager-Waldau, R. Burkhardt, E. Bucher, Thin Solid Films 189, 339 (1990), doi: 10.1016/0040-6090(90)90463-N
• [10] Jin-Mun Yun, Yong-Jin Noh, Jun-Seok Yeo, Yeong-Jin Go, Seok-In Na, Hyung-Gu Jeong, Juhwan Kim, Sehyun Lee, Seok-Soon Kim, Hye Young Koo, Tae-Wook Kim, Dong-Yu Kim, J. Mater. Chem. C 1, 3777 (2013), doi: 10.1039/C3TC30504J
• [11] P. Grange, B. Delmon, J. Less-Common Met. 36, 353 (1974), doi: 10.1016/0022-5088(74)90119-2
• [12] W.M.R. Divigalpitiya, S.R. Morrison, R.F. Frindt, Thin Solid Films 186, 177 (1990), doi: 10.1016/0040-6090(90)90511-B
• [13] Z. Zeng, Z. Yin, X. Huang, H. Li, Q. He, G. Lu, F. Boey, H. Zhang, Angew. Chem. Int. Ed. 50, 11093 (2011), doi: 10.1002/anie.201106004
• [14] B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, A. Kis, Nat. Nanotechnol. 6, 147 (2011), doi: 10.1038/nnano.2010.279
• [15] A. Ayari, E. Cobas, O. Ogundadegbe, M.S. Fuhrer, J. Appl. Phys. 101, 014507 (2007), doi: 10.1063/1.2407388
• [16] X. Huang, Z. Zeng, H. Zhang, Chem. Soc. Rev. 42, 1934 (2013), doi: 10.1039/C2CS35387C
• [17] M. Chhowalla, H.S. Shin, G. Eda, L.-J. Li, K.P. Loh, H. Zhang, Nat. Chem. 5, 263 (2013), doi: 10.1038/nchem.1589
• [18] H. Li, Z. Yin, Q. He, H. Li, X. Huang, G. Lu, D.W.H. Fam, A.L.Y. Tok, Q. Zhang, H. Zhang, Small 8, 63 (2012), doi: 10.1002/smll.201101016
• [19] Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen and H. Zhang, ACS Nano 6, 74 (2012), doi: 10.1021/nn2024557
• [20] Y. Zhang, J. Ye, Y. Matsuhashi, Y. Iwasa, Nano Lett. 12, 1136 (2012), doi: 10.1021/nl2021575
• [21] V. Podzorov, M.E. Gershenson, C. Kloc, R. Zeis, E. Bucher, Appl. Phys. Lett. 84, 3301 (2004), doi: 10.1063/1.1723695
• [22] S.K. Srivastava, T.K. Mandal, B.K. Samantaray, Synth. Met. 90, 135 (1997)
• [23] J.A. van Vechten, T.K. Bergstresser, Phys. Rev. B 1, 3351 (19701), doi: 10.1103/PhysRevB.1.3351
• [24] C. Thomazeau, C. Geantet, M. Lacroix, V. Harlé, S. Benazeth, C. Marhic, M. Danot, J. Solid State Chem. 160, 147 (2001), doi: 10.1006/jssc.2001.9208
• [25] C. Thomazeau, C. Geantet, M. Lacroix, M. Danot, V. Harlé, P. Raybaud, Appl. Catal. A Gen. 322, 92 (2007), doi: 10.1016/j.apcata.2007.01.016
• [26] M. Nath, K. Mukhopadhyay, C.N.R. Rao, Chem. Phys. Lett. 352, 163 (2002), doi: 10.1016/S0009-2614(01)01456-7
• [27] T.C. Damen, S.P.S. Porto, B. Tell, Phys. Rev. 142, 570 (1966), doi: 10.1103/PhysRev.142.570
• [28] R. Loudon, Adv. Phys. 13, 423 (1964), doi: 10.1080/00018736400101051
• [29] T. Sekine, T. Nakashizu, K. Toyoda, K. Uchinokura, E. Matsuura, Solid State Commun. 35, 371 (1980), doi: 10.1016/0038-1098(80)90518-9
• [30] S. Ould Saad Hamady, N. Dupuis, J. Décobert, A. Ougazzaden, J. Cryst. Growth 310, 4741 (2008), doi: 10.1016/j.jcrysgro.2008.06.080
• [31] M. Ishii, M. Saeki, Solid State Commun. 67, 895 (1988), doi: 10.1016/0038-1098(88)90125-1
• [32] I.F. Chang, S.S. Mitra, Adv. Phys. 20, 359 (1971), doi: 10.1080/00018737100101271
• [33] N.M. Gasanly, N.S. Yuksek, Acta Phys. Pol. A 108, 997 (2005), doi: 10.12693/APhysPolA.108.997

Identifiers

DOI

10.12693/APhysPolA.131.259