Influence of Growth Conditions of Hydrogenated Amorphous Silicon Carbide on Optical Properties of the Interfacial Layer in SiC-Based Photodevice

• Authors: S. Kaci , A. Keffous , I. Bozetine , M. Trari , O. Fellahi
• Languages of publication: EN

Abstracts

EN

The attention has been focused on the optical properties of structures of the form Au/MS/a-Si_{1-x}C_x:H/Si(100)/Al as a function of the deposition temperature of the a-Si_{1-x}C_x:H films. The amorphous SiC:H films were obtained for different temperatures ranging from 150°C up to 500°C. By photoluminescence, blue emission from all the structures was observed at room temperature and a high emission was obtained for sample whose amorphous film was deposited at 500°C. The spectral response of Au/MS/a-Si_{1-x}C_x:H/Si(100)/Al structures with a-Si_{1-x}C_x:H film deposited at 250°C, exhibits a maximum value at λ=950 nm while for structure with a-Si_{1-x}C_x:H film obtained at 150°C, a maximum value of λ was observed at 400 nm.

Keywords

EN

78.68.+m; 78.66.-w; 78.67.Bf; 78.55.-m

Discipline

• 78.68.+m: Optical properties of surfaces
• 78.67.Bf: Nanocrystals, nanoparticles, and nanoclusters
• 78.66.-w: Optical properties of specific thin films(for optical properties of low-dimensional, mesoscopic, and nanoscale materials, see 78.67.-n; for optical properties of surfaces, see 78.68.+m)
• 78.55.-m: Photoluminescence, properties and materials(for time resolved luminescence, see 78.47.jd)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2016
• Volume: 130
• Issue: 1
• Pages: 463-465

Dates

published

2016-07

Contributors

author

S. Kaci

• Research Center on Semiconductor Technology for Energetic, 2 Bd Frantz Fanon, PB 140, 7M Algiers, Algeria

author

A. Keffous

• Research Center on Semiconductor Technology for Energetic, 2 Bd Frantz Fanon, PB 140, 7M Algiers, Algeria

author

I. Bozetine

• Research Center on Semiconductor Technology for Energetic, 2 Bd Frantz Fanon, PB 140, 7M Algiers, Algeria

author

M. Trari

• University of Science and Technology Houari Boumediene, PB 32, ElAlia, Bab Ezzouar, Algiers, Algeria

author

O. Fellahi

• Research Center on Semiconductor Technology for Energetic, 2 Bd Frantz Fanon, PB 140, 7M Algiers, Algeria

References

• [1] H.J. Im, Y. Ding, J.P. Pelz, W.J. Choyke, Phys. Rev. B 64, 075310 (2001), doi: 10.1103/PhysRevB.64.075310
• [2] F. Yakuphanoglu, Synth. Metals 160, 1551 (2010), doi: 10.1016/j.synthmet.2010.05.024
• [3] F.W. Wise, Acc. Chem. Res. 33, 773 (2000), doi: 10.1021/ar970220q
• [4] D. Kruangam, T. Endo, W.G. Pu, S. Nonomura, H. Okamotoa, Y. Hamakawa, J. Non-Cryst. Solids 77/78, 1429 (1985), doi: 10.1016/0022-3093(87)90070-6
• [5] F. Demichelis, F. Giorgis, C.F. Pirri, E. Tresso, Philos. Mag. A 72, 913 (1995), doi: 10.1080/01418619508239944
• [6] F.W. Wise, Acc. Chem. Res. 33, 16 (2000), doi: 10.1021/ar970220q
• [7] J.L. Machol, F.W. Wise, R.C. Patel, D.B. Tanner, Phys. Rev. B 48, 2819 (1993), doi: 10.1103/PhysRevB.48.2819
• [8] N.S. Belova, A.A. Rempel, Inorg. Mater. 40, 3 (2004), doi: 10.1023/B:INMA.0000012170.32403.1c
• [9] I. Pop, C. Nascu, V. Ionescu, E. Indrea, I. Bratu, Thin Solid Films 307, 240 (1997), doi: 10.1016/S0040-6090(97)00304-0
• [10] P. Gadamne, Y. Yagil, G. Deutscher, J. Appl. Phys. 66, 3019 (1989), doi: 10.1063/1.344187
• [11] S. Kaci, A. Keffous, S. Hakoum, M. Trari, O. Mansri, H. Menari, Appl. Surf. Sci. 305, 740 (2014), doi: 10.1016/j.apsusc.2014.03.190
• [12] T. Fu, Sens. Actuat. B 140, 116 (2009), doi: 10.1016/j.snb.2009.03.075
• [13] S. Kaci, A. Keffous, S. Hakoum, O. Mansri, Vacuum 116, 27 (2015), doi: 10.1016/j.vacuum.2015.02.024
• [14] Y. Gulen, K. Ejderha, C. Nuhoglu, A. Turut, Microelectron. Eng. 88, 179 (2011), doi: 10.1016/j.mee.2010.10.009
• [15] R. Saleh, L. Munis, W. Beyer, Thin Solid Films 426, 117 (2003), doi: 10.1016/S0925-9635(03)00207-3
• [16] R. Platz, S. Wagner, C. Hof, A. Shah, S. Wieder, J. Appl. Phys. 84, 3949 (1998), doi: 10.1063/1.368592
• [17] J. Xu, L. Yang, Y. Rui, J. Mei, X. Zhang, W. Li, Z. Ma, Ling Xu, X. Huang, K. Chen, Solid State Commun. 33, 565 (2005), doi: 10.1016/j.ssc.2004.12.036
• [18] S. Kaci, A. Keffous, M. Trari, H. Menari, O. Mansri, B. Mahmoudi, L. Guerbous, Opt. Commun. 283, 3355 (2010), doi: 10.1016/j.optcom.2010.04.046
• [19] V. Suendo, G. Patriarche, P.R. Cabarrocas, Opt. Mater. 27, 953 (2005), doi: 10.1016/j.optmat.2004.08.042
• [20] S. Kaci, A. Keffous, S. Hakoum, N. Makrani, M. Kechouane, L. Guerbous, Opt. Mater. 35, 1 (2012), doi: 10.1016/j.optmat.2012.05.031

Identifiers

DOI

10.12693/APhysPolA.130.463