High Temperature Stability of Electrical and Optical Properties of Bulk GaN:Mg Grown by HNPS Method in Different Crystallographic Directions

• Authors: B. Sadovyi , M. Amilusik , G. Staszczak , M. Bockowski , I. Grzegory , S. Porowski , L. Konczewicz , V. Tsybulskyi , M. Panasyuk , V. Rudyk , I. Karbovnyk , V. Kapustianyk , E. Litwin-Staszewska , R. Piotrzkowski
• Languages of publication: EN

Abstracts

EN

Single crystals of Mg-doped GaN grown by high nitrogen pressure solution method in different crystallographic directions ([0001], [101̅1], and [101̅1̅]) were investigated in order to determine thermal stability of their electrical and optical properties. Obtained dependences of resistivity, the Hall coefficient and energy shift of Mg-related photoluminescence peak on annealing temperature allow to suggest that incorporation of Mg in GaN is significantly influenced by the direction of the crystallization front.

Keywords

EN

71.55.Eq; 72.80.Ey

Discipline

• 72.80.Ey: III-V and II-VI semiconductors
• 71.55.Eq: III-V semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2016
• Volume: 129
• Issue: 1a
• Pages: A-126-A-128

Dates

published

2016-01

Contributors

author

B. Sadovyi

• Institute of High Pressure Physics, Polish Aacademy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland
• Ivan Franko National University of Lviv, Dragomanova 50, Lviv 79005, Ukraine

author

M. Amilusik

• Institute of High Pressure Physics, Polish Aacademy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland

author

G. Staszczak

• Institute of High Pressure Physics, Polish Aacademy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland

author

M. Bockowski

• Institute of High Pressure Physics, Polish Aacademy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland

author

I. Grzegory

• Institute of High Pressure Physics, Polish Aacademy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland

author

S. Porowski

• Institute of High Pressure Physics, Polish Aacademy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland

author

L. Konczewicz

• Laboratoire Charles Coulomb (L2C), UMR 5221 CNRS-Universit'e de Montpellier, Montpellier, F-France

author

V. Tsybulskyi

• Ivan Franko National University of Lviv, Dragomanova 50, Lviv 79005, Ukraine

author

M. Panasyuk

• Ivan Franko National University of Lviv, Dragomanova 50, Lviv 79005, Ukraine

author

V. Rudyk

• Ivan Franko National University of Lviv, Dragomanova 50, Lviv 79005, Ukraine

author

I. Karbovnyk

• Ivan Franko National University of Lviv, Dragomanova 50, Lviv 79005, Ukraine

author

V. Kapustianyk

• Ivan Franko National University of Lviv, Dragomanova 50, Lviv 79005, Ukraine

author

E. Litwin-Staszewska

• Institute of High Pressure Physics, Polish Aacademy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland

author

R. Piotrzkowski

• Institute of High Pressure Physics, Polish Aacademy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland

References

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Identifiers

DOI

10.12693/APhysPolA.129.A-126