Correlative Optical Spectroscopy and Atom Probe Tomography

• Authors: L. Rigutti
• Languages of publication: EN

Abstracts

EN

This lecture will introduce and revise recent experimental developments on correlative laser-assisted atom probe tomography and optical spectroscopy, with a particular attention to the domain of semiconductor nanostructures. The main goal of correlative microscopy is to gain a deeper insight in materials science studies. For the materials scientist, indeed, the possibility of establishing a link between optical spectroscopic properties of a given system and the reconstruction of its 3D structure and composition by atom probe tomography yields an unprecedented insight into the complex influence of the structure on the electronic states and on the optical transitions characterizing the system. This lecture will therefore revise the different approaches by which it is possible to correlate optical spectroscopy experiments - in particular micro-photoluminescence with atom probe tomography and, possibly, with transmission electron microscopy. Dedicated sample preparation protocols and recent case studies will be reported. Finally, a perspective approach will be introduced, in which the same femtosecond laser pulse could be exploited not only for triggering ion evaporation, but also photon emission in situ in the atom probe itself.

Keywords

EN

61.46.-w; 61.72.-y; 68.65.-k; 78.55.-m; 78.67.-n

Discipline

• 68.65.-k: Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties(for structure of nanoscale materials, see 61.46.-w; for magnetic properties of interfaces, see 75.70.Cn; for superconducting properties, see 74.78.-w; for optical properties, see 78.67.-n; for transport properties, see 73.63.-b; for thermal properties of nanocrystals and nanotubes, see 65.80.-g; for mechanical properties of nanoscale systems, see 62.25.-g)
• 78.55.-m: Photoluminescence, properties and materials(for time resolved luminescence, see 78.47.jd)
• 61.72.-y: Defects and impurities in crystals; microstructure(for radiation induced defects, see 61.80.-x; for defects in surfaces, interfaces, and thin films, see 68.35.Dv and 68.55.Ln; see also 85.40.Ry Impurity doping, diffusion, and ion implantation technology; for effects of crystal defects and doping on superconducting transition temperature, see 74.62.Dh)
• 61.46.-w: Structure of nanoscale materials(for thermal properties of nanocrystals and nanotubes, see 65.80.-g; for mechanical properties of nanoscale systems, see 62.25.-g; for electronic transport in nanoscale materials, see 73.63.-b; see also 62.23.-c Structural classes of nanoscale systems; 64.70.Nd Structural transitions in nanoscale materials; for magnetic properties of nanostructures, see 75.75.-c)
• 78.67.-n: Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures(for magnetic properties of nanostructures, see 75.75.-c; for electronic transport in nanoscale structures, see 73.63.-b; for mechanical properties of nanoscale systems, see 62.25.-g)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2016
• Volume: 129
• Issue: 1a
• Pages: A-7-A-25

Dates

published

2016-01

Contributors

author

L. Rigutti

• Groupe de Physique des Matériaux, UMR 6634 CNRS, University and INSA of Rouen, Normandie University, Avenue de l'Université BP12, St. Etienne du Rouvray, 76800, France

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Identifiers

DOI

10.12693/APhysPolA.129.A-7