Structural and Electronic Properties of Graphene Oxide and Reduced Graphene Oxide Papers Prepared by High Pressure and High Temperature Treatment

• Authors: M. Tokarczyk , G. Kowalski , A. Witowski , R. Koziński , K. Librant , M. Aksienionek , L Lipińska , P. Ciepielewski
• Languages of publication: EN

Abstracts

EN

"Graphene paper" prepared by new proprietary method involving high pressure and high temperature treatment in the reduction process show new possibilities in this area. Different phase content: multilayer and single layer graphene stacks recorded in this study for RGO samples are accompanied by the specific electric and optical parameters. We have found that process temperatures above 900°C play crucial role in structural and other properties. For the process temperature around 2000°C we found the onset of the graphitization in the samples.

Keywords

EN

61.48.Gh; 61.72.Dd; 63.22.Rc

Discipline

• 61.48.Gh: Structure of graphene
• 63.22.Rc: Phonons in graphene
• 61.72.Dd: Experimental determination of defects by diffraction and scattering

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 126
• Issue: 5
• Pages: 1190-1194

Dates

published

2014-11

Contributors

author

M. Tokarczyk

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, L. Pasteura 5, 02-093 Warszawa, Poland

author

G. Kowalski

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, L. Pasteura 5, 02-093 Warszawa, Poland

author

A. Witowski

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, L. Pasteura 5, 02-093 Warszawa, Poland

author

R. Koziński

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

author

K. Librant

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

author

M. Aksienionek

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

author

L Lipińska

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

author

P. Ciepielewski

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

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Identifiers

DOI

10.12693/APhysPolA.126.1190