Influence of Flash Lamp Annealing on the Optical Properties of CIGS Layer

• Authors: S. Prucnal , F. Jiao , D. Reichel , K. Zhao , S. Cornelius , M. Turek , K. Pyszniak , A. Drozdziel , W. Skorupa , M. Helm , S. Zhou
• Languages of publication: EN

Abstracts

EN

Copper indium gallium diselenide (CIGS) becomes more significant for solar cell applications as an alternative to silicon. The quality of the layer has a critical impact on the final efficiency of the solar cell. An influence of the post-deposition millisecond range flash lamp annealing on the optical and microstructural properties of the CIGS films was investigated. Based on the Raman and photoluminescence spectroscopy, it is shown that flash lamp annealing reduces the defect concentration and leads to an increase of the photoluminescence intensity by a factor of six compared to the nonannealed sample. Moreover, after flash lamp annealing the degradation of the photoluminescence is significantly suppressed and the absolute absorption in the wavelength range of 200-1200 nm increases by 25%.

Keywords

EN

88.40.jn; 61.72.Cc; 78.55.Hx

Discipline

• 61.72.Cc: Kinetics of defect formation and annealing
• 88.40.jn: Thin film Cu-based I-III-VI2 solar cells
• 78.55.Hx: Other solid inorganic materials

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 125
• Issue: 6
• Pages: 1404-1408

Dates

published

2014-06

Contributors

author

S. Prucnal

• Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR) P.O. Box 510119, Dresden 01314, Germany

author

F. Jiao

• State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University Beijing 100871, China

author

D. Reichel

• Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR) P.O. Box 510119, Dresden 01314, Germany

author

K. Zhao

• State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University Beijing 100871, China

author

S. Cornelius

• Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR) P.O. Box 510119, Dresden 01314, Germany

author

M. Turek

• Institute of Physics, Maria Curie Skłodowska University, 20-031 Lublin, Poland

author

K. Pyszniak

• Institute of Physics, Maria Curie Skłodowska University, 20-031 Lublin, Poland

author

A. Drozdziel

• Institute of Physics, Maria Curie Skłodowska University, 20-031 Lublin, Poland

author

W. Skorupa

• Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR) P.O. Box 510119, Dresden 01314, Germany

author

M. Helm

• Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR) P.O. Box 510119, Dresden 01314, Germany

author

S. Zhou

• Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR) P.O. Box 510119, Dresden 01314, Germany

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Identifiers

DOI

10.12693/APhysPolA.125.1404