Effect of Secondary Electroluminescence on Cathodoluminescence and Other Luminescence Measurements

• Authors: M. Pluska , A. Czerwinski , A. Szerling , J. Ratajczak , J. Kątcki
• Languages of publication: EN

Abstracts

EN

Cathodoluminescence and photoluminescence measurements are commonly accepted as revealing local properties of a specimen region excited by a beam of electrons or photons. However, in the presence of a strong electric field (e.g. a junction) an electron (or light/laser) beam-induced current is generated, which spreads over the structure. A secondary non-local electroluminescence, generated by this current and detected together with the expected luminescence signal, may strongly distort measurement results. This was confirmed by cathodoluminescence measurements on test structures prepared by focused ion beam on AlGaAs/GaAs/InGaAs laser heterostructures. Methods for minimizing the distortion of measured luminescence signals are presented.

Keywords

EN

78.60.Hk; 85.30.De; 61.72.-y; 68.37.Hk

Discipline

• 85.30.De: Semiconductor-device characterization, design, and modeling
• 68.37.Hk: Scanning electron microscopy (SEM) (including EBIC)
• 61.72.-y: Defects and impurities in crystals; microstructure(for radiation induced defects, see 61.80.-x; for defects in surfaces, interfaces, and thin films, see 68.35.Dv and 68.55.Ln; see also 85.40.Ry Impurity doping, diffusion, and ion implantation technology; for effects of crystal defects and doping on superconducting transition temperature, see 74.62.Dh)
• 78.60.Hk: Cathodoluminescence, ionoluminescence

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 125
• Issue: 4
• Pages: 1027-1032

Dates

published

2014-04

Contributors

author

M. Pluska

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

author

A. Czerwinski

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

author

A. Szerling

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

author

J. Ratajczak

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

author

J. Kątcki

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

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Identifiers

DOI

10.12693/APhysPolA.125.1027