Correlation between Copper Precipitation and Grown-In Oxygen Precipitates in 300~mm Czochralski Silicon Wafer

• Authors: P. Dong , X. Ma , D. Yang
• Languages of publication: EN

Abstracts

EN

The behaviors of copper (Cu) precipitation along the radial direction of the 300 mm Czochralski grown silicon wafer have been investigated. It is found that the density of Cu precipitates decreases from the center to edge of the silicon wafer. Moreover, it is revealed that the density of grown-in oxygen precipitates also decreases along the radial direction as mentioned above. Therefore, it is apparent that the Cu precipitate density is positively correlative to the grown-in oxygen precipitate density. This is due to that the grown-in oxygen precipitates can serve as the heterogeneous nucleation centers for Cu precipitation. It is suggested that the Cu decoration in combination with preferential etching can be used to indirectly evaluate the radial distribution of grown-in oxygen precipitates in the silicon wafers.

Keywords

EN

61.72.Ff; 61.72.Ji; 61.72.Qq; 61.72.Yx; 61.72.Cc

Discipline

• 61.72.Cc: Kinetics of defect formation and annealing
• 61.72.Qq: Microscopic defects (voids, inclusions, etc.)
• 61.72.Ff: Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
• 61.72.Yx: Interaction between different crystal defects; gettering effect(for magnetic impurity interactions, see 75.30.Hx)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 125
• Issue: 4
• Pages: 972-975

Dates

published

2014-04

Contributors

author

P. Dong

• State Key Laboratory of Silicon Materials and Department of Material Science and Engineering Zhejiang University, Hangzhou 310027, China

author

X. Ma

• State Key Laboratory of Silicon Materials and Department of Material Science and Engineering Zhejiang University, Hangzhou 310027, China

author

D. Yang

• State Key Laboratory of Silicon Materials and Department of Material Science and Engineering Zhejiang University, Hangzhou 310027, China

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Identifiers

DOI

10.12693/APhysPolA.125.972