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2013 | 124 | 5 | 805-808

Article title

Lateral Coupling within the Ensemble of InAs/InGaAlAs/InP Quantum Dashes

Content

Title variants

Languages of publication

EN

Abstracts

EN
In this work we investigate the electronic structure of coupled quantum dashes. The respective confined state energy levels are calculated for various cross-sectional shapes and sizes of the dashes and in function of the lateral distance between them. The results are confronted with the existing experimental data on the optical transitions in such structures. It has been concluded that for realistic system parameters (geometry and spatial in-plane separation) the obtained direct coupling is weak and in most of the applications the dashes can be considered individually, as long as the ensemble is strongly inhomegeneous.

Keywords

EN

Year

Volume

124

Issue

5

Pages

805-808

Physical description

Dates

published
2013-11

Contributors

author
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
author
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
author
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

References

  • [1] J.P. Reithmaier, G. Eisenstein, A. Forchel, Proc. IEEE 95, 1779 (2007)
  • [2] G. Sęk, P. Podemski, A. Musiał, J. Misiewicz, S. Hein, S. Höfling, A. Forchel, J. Appl. Phys. 105, 086104 (2009)
  • [3] T. Mensing, L. Worschech, R. Schwertberger, J.P. Reithmaier, A. Forchel, Appl. Phys. Lett. 82, 2799 (2003)
  • [4] N. Chauvin, P. Nedel, C. Seassal, B. Ben Bakir, X. Letartre, M. Gendry, A. Fiore, P. Viktorovitch, Phys. Rev. B 80, 045315 (2009)
  • [5] W. Rudno-Rudzinski, R. Kudrawiec, P. Podemski, G. Sęk, J. Misiewicz, A. Somers, R. Schwertberger, J.P. Reithmaier, A. Forchel, Appl. Phys. Lett. 89, 031908 (2006)
  • [6] G. Sęk, P. Podemski, R. Kudrawiec, J. Misiewicz, A. Somers, S. Hein, S. Höfling, J.P. Reithmaier, A. Forchel, Proc. SPIE 6481, 64810F (2007)
  • [7] A. Sauerwald, T. Kümmell, G. Bacher, A. Somers, R. Schwertberger, J.P. Reithmaier, A. Forchel, Appl. Phys. Lett. 86, 253112 (2005)
  • [8] M. Gioannini, IEEE J. Quantum Electron. 40, 364 (2004)
  • [9] G.L. Bir, G.E. Pikus, Symmetry and Strain-Induced Effects in Semiconductors, Wiley, New York 1974
  • [10] J.W. Thomas, Numerical Partial Differential Equations, Finite Difference Methods, Springer-Verlag, New York 1995
  • [11] I. Vurgaftman, J.R. Meyer, L.R. Ram-Mohan, J. Appl. Phys. 89, 5815 (2001)
  • [12] W. Rudno-Rudziński, R. Kudrawiec, G. Sęk, J. Misiewicz, A. Somers, R. Schwertberger, J.P. Reithmaier, A. Forchel, Appl. Phys. Lett. 88, 141915 (2006)
  • [13] G. Bastard, Wave Mechanics Applied to Semiconductor Heterostructures, Les Éditions de Physique, Zone Industrielle de Courtabouf (France) 1988

Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv124n514kz
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