High-Pressure Treatment up to 25~GPa of Czochralski Grown Si Samples Containing Different Admixtures and Defects

• Authors: V. Shchennikov , Vs. Shchennikov , I. Korobeynikov , N. Morozova
• Languages of publication: EN

Abstracts

EN

The thermoelectric properties of a set of single crystalline Si wafers with different oxygen concentration grown by the Czochralski technique have been studied at ultrahigh pressures up to 25 GPa. The dependence of semiconductor-metal transition pressure at Czochralski grown Si on the concentration c_{O} of the interstitial oxygen was found to present a convex curve with the maximum near c_{O} ≈ 9 × 10^{17} cm^{-3}. The high pressure thermoelectric power method seems to be suitable for characterization of impurity-defect structure of Si wafers. For Si_{1 - x}Ge_{x} crystals (1% < x < 3%) the strong changes of both the value and the sign of thermoelectric power have been observed at pressures much less than ones of Si-I → Si-II transition. From nanoindentation data the phase transition Si-I → Si-II, corresponding to semiconductor-metal electronic transformation has been detected at the loading up to ≈ 10 mN. These findings suggest a way for creation of integrated circuits, in which zones with different types of conductivity and hence different p-n, p-n-p etc. structures may be "written" by applied stress at nanoscale level, and the control on the value of the above stresses now is possible by the proposed nanoindentation technique.

Keywords

EN

61.72.uf; 81.40.Vw; 72.20.Pa; 62.50.-p; 05.70.Fh

Discipline

• 81.40.Vw: Pressure treatment(see also 62.50.-p High-pressure effects in solids and liquids; 61.50.Ks Crystallographic aspects of phase transformations; pressure effects; for pressure effects on superconducting transition temperature, see 74.62.Fj)
• 05.70.Fh: Phase transitions: general studies(see also 05.30.Rt Quantum phase transitions in quantum statistical mechanics; 64.70.Tg Quantum phase transitions in specific phase transitions; 73.43.Nq Quantum phase transitions in quantum Hall effects; for superconductivity phase diagrams, see 74.25.Dw; for magnetic phase boundaries, see 75.30.Kz; for ferroelectric phase transitions, see 77.80.B-)
• 72.20.Pa: Thermoelectric and thermomagnetic effects
• 61.72.uf: Ge and Si
• 62.50.-p: High-pressure effects in solids and liquids(for high pressure apparatus and techniques, see 07.35.+k; for high-pressure behavior of rocks and minerals, see 91.60.Gf; for pressure treatments, see 81.40.Vw in materials science; for effects of pressure on superconducting transition temperature, see 74.62.Fj)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2013
• Volume: 124
• Issue: 2
• Pages: 244-249

Dates

published

2013-08

Contributors

author

V. Shchennikov

• Institute of Metal Physics of Russian Academy of Sciences, Urals Division 18 S. Kovalevskaya Str.,Yekaterinburg 620990, Russia

author

Vs. Shchennikov

• Institute of Engineering Sciences of Russian Academy of Sciences, Urals Division 34 Komsomolskaya Str., Yekaterinburg 620219, Russia

author

I. Korobeynikov

• Institute of Metal Physics of Russian Academy of Sciences, Urals Division 18 S. Kovalevskaya Str.,Yekaterinburg 620990, Russia

author

N. Morozova

• Institute of Metal Physics of Russian Academy of Sciences, Urals Division 18 S. Kovalevskaya Str.,Yekaterinburg 620990, Russia

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Identifiers

DOI

10.12693/APhysPolA.124.244