Transport Properties of Nitrided VN-SiO_{2} Sol-Gel Derived Films

• Authors: B. Kościelska
• Languages of publication: EN

Abstracts

EN

This work presents transport properties of xVN-(100-x)SiO_{2} (where x = 90, 80, 70, 60 mol%) films. The films were prepared by thermal nitridation of sol-gel derived V_{2}O_{3}-SiO_{2} (in proper molar ratio) coatings. The coatings obtained by sol-gel method are especially suitable for the ammonolysis because of their porosity. The microporous structure allows both a significant incorporation of nitrogen and its distribution through the film. The nitridation process of V_{2}O_{3}-SiO_{2} coatings leads to the formation of disordered structures, with VN metallic grains dispersed in the matrix of insulating SiO_{2}. The critical temperatures of the superconducting transition of the samples T_{conset} are about 7.5 K.

Keywords

EN

81.20.Fw; 74.78.-w; 74.70.Ad

Discipline

• 74.78.-w: Superconducting films and low-dimensional structures
• 81.20.Fw: Sol-gel processing, precipitation(for reactions in sol-gels, see 82.33.Ln; for sol-gels as disperse system, see 82.70.Gg)
• 74.70.Ad: Metals; alloys and binary compounds (including A15, MgB2, etc.)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2012
• Volume: 121
• Issue: 4
• Pages: 744-746

Dates

published

2012-04

Contributors

author

B. Kościelska

• Faculty of Applied Physics and Mathematics, Gdańsk University of Technology , Narutowicza 11/12, 80-233 Gdańsk, Poland

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Identifiers

DOI

10.12693/APhysPolA.121.744