Bond-Selective Excitation and Following Displacement of Ge Atoms in GeTe/Sb_{2}Te_{3} Superlattice

• Authors: K. Makino , J. Tominaga , A. Kolobov , P. Fons , M. Hase
• Languages of publication: EN

Abstracts

EN

Phase change random access memory devices made from chalcogenides compounds, such as Ge_{2}Sb_{2}Te_{5}, have attracted much attention because of their high-speed read-write and low power consumption capabilities. The phase change in Ge_{2}Sb_{2}Te_{5} is thought to be characterized by the displacement of Ge atoms, accompanying relaxation of surrounding Sb and Te atoms. Here we examine a new approach, that is the manipulation of Ge-Te bonds using linearly-polarized femtosecond near-infrared optical pulses. As a result, p-polarized pump pulses are found to be more effective in inducing the precursor of phase change, probably due to the atomic arrangements along the unique axis of the superlattice structure.

Keywords

EN

78.47.J-; 63.22.Np; 63.20.kd; 63.20.kk

Discipline

• 63.20.kd: Phonon-electron interactions
• 78.47.J-: Ultrafast spectroscopy (<1>(see also 42.65.Re Ultrafast processes; optical pulse generation and pulse compression; 82.53.Mj Femtosecond probing of semiconductor nanostructures)
• 63.20.kk: Phonon interactions with other quasiparticles
• 63.22.Np: Layered systems

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2012
• Volume: 121
• Issue: 2
• Pages: 336-339

Dates

published

2012-02

Contributors

author

K. Makino

• Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan

author

J. Tominaga

• Functional Nano-phase-change Research Team, Nanodevice Innovation Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 4, 1-1-1 Higashi, Tsukuba 305-8562, Japan

author

A. Kolobov

• Functional Nano-phase-change Research Team, Nanodevice Innovation Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 4, 1-1-1 Higashi, Tsukuba 305-8562, Japan

author

P. Fons

• Functional Nano-phase-change Research Team, Nanodevice Innovation Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 4, 1-1-1 Higashi, Tsukuba 305-8562, Japan

author

M. Hase

• Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan

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Identifiers

DOI

10.12693/APhysPolA.121.336