Technology of Ultrathin NbN and NbTiN Films for Superconducting Photodetectors

• Authors: M. Guziewicz , W. Slysz , M. Borysiewicz , R. Kruszka , Z. Sidor , M. Juchniewicz , K. Golaszewska , J. Domagala , W. Rzodkiewicz , J. Ratajczak , J. Bar , M. Wegrzecki , R. Sobolewski
• Languages of publication: EN

Abstracts

EN

We report fabrication and characterization of ultrathin NbN and NbTiN films designed for superconducting photodetectors. Our NbN and NbTiN films were deposited on Al_2O_3 and Si single-crystal wafers by a high-temperature, reactive magnetron sputtering method and, subsequently, annealed at 1000°C. The best, 18 nm thick NbN films deposited on sapphire exhibited the critical temperature of 15.0 K and the critical current density as high as ≈ 8 × 10^6 A/cm^2 at 4.8 K.

Keywords

EN

74.62.Bf; 74.78.-w; 81.15.Cd; 81.15.Jj

Discipline

• 81.15.Jj: Ion and electron beam-assisted deposition; ion plating(see also 52.77.Dq Plasma-based ion implantation and deposition in physics of plasmas)
• 74.78.-w: Superconducting films and low-dimensional structures
• 74.62.Bf: Effects of material synthesis, crystal structure, and chemical composition(for methods of materials synthesis, see 81.20.-n)
• 81.15.Cd: Deposition by sputtering

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 6A
• Pages: A-76-A-79

Dates

published

2011-12

Contributors

author

M. Guziewicz

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland

author

W. Slysz

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland

author

M. Borysiewicz

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland

author

R. Kruszka

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland

author

Z. Sidor

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland

author

M. Juchniewicz

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland

author

K. Golaszewska

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland

author

J. Domagala

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland
• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

W. Rzodkiewicz

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland

author

J. Ratajczak

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland

author

J. Bar

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland

author

M. Wegrzecki

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland

author

R. Sobolewski

• Departments of Electrical and Computer Engineering and Physics and Astronomy, Materials Science Program and Laboratory for Laser Energetics, University of Rochester, Rochester, NY-14627-0231, USA

References

• [1] G.N. Gol'tsman, O. Okunev, G. Chulkova, A. Lipatov, A. Semenov, K. Smirnov, B. Voronov, A. Dzardanov, C. Williams, R. Sobolewski, Appl. Phys. Lett. 79, 705 (2001)
• [2] R. Sobolewski, A. Verevkin, G.N. Gol'tsman, A. Lipatov, K. Wilsher, IEEE Trans. Appl. Supercond. 13, 1151 (2003)
• [3] A. Verevkin, J. Zhang, R. Sobolewski, A. Lipatov, O. Okunev, G. Chulkova, A. Korneev, K. Smirnov, G.N. Gol'tsman, A. Semenov, Appl. Phys. Lett. 80, 4687 (2002)
• [4] A. Korneev, P. Kouminov, V. Izbenko, G. Chulkova, K. Smirnov, B. Voronov, G.N. Gol'tsman, M. Currie, W. Lo, K. Wilsher, J. Zhang, W. Slysz, A. Pearlman, A. Verevkin, R. Sobolewski, Appl. Phys. Lett. 84, 5338 (2004)
• [5] W. Słysz, M. Węgrzecki, J. Bar, P. Grabiec, M. Górska, V. Zwiller, C. Latta, P. Bohi, I. Milostnaya, A. Korneev, O. Minayeva, G. Chulkova, K. Smirnov, B. Voronov, G. Gol'tsman, A. Pearlman, A. Cross, I. Komissarov, A. Verevkin, R. Sobolewski, Appl. Phys. Lett. 88, 261113 (2006)
• [6] J. Chen, J.B. Altepeter, M. Medic, K.F. Lee, B. Gokden, R.H. Hadfield, S.W. Nam, P. Kumar, Phys. Rev. Lett. 100, 133603 (2008)
• [7] M.T. Jarvi, M.J. Niedre, M.S. Patterson, B.C. Wilson, Photochem. Photobiol. 82, 1198 (2006)
• [8] W. Słysz, M. Guziewicz, M. Borysiewicz, J.Z. Domagała, I. Pasternak, K. Hejduk, W. Rzodkiewicz, J. Ratajczak, J. Bar, M. Wegrzecki, P. Grabiec, R. Grodecki, I. Wegrzecka, R. Sobolewski, Acta Phys. Pol. A 120, 200 (2011)
• [9] M.G. Tanner, C.M. Natarajan, V.K. Pottapenjara, J.A. O'Connor, R.J. Warburton, R.H. Hadfield, B. Baek, S. Nam, S.N. Dorenbos, E. Bermúdez Ureña, T. Zijlstra, T.M. Klapwijk, V. Zwiller, Appl. Phys. Lett. 96, 221109 (2010)
• [10] N. Marrocco, G.P. Pepe, A. Capretti, L. Parlato, V. Pagliarulo, G. Peluso, A. Barone, R. Cristiano, M. Ejrnaes, A. Casaburi, N. Kashiwazaki, T. Taino, H. Myoren, R. Sobolewski, Appl. Phys. Lett. 97, 092504 (2010)
• [11] J.R. Gao, M. Hajenius, F.D. Tichelaar, T.M. Klapwijk, B. Voronov, E. Grishin, G.N. Gol'tsman, C.A. Zorman, M. Mehregany, Appl. Phys. Lett. 91, 062504 (2007)

Identifiers

DOI

10.12693/APhysPolA.120.A-76