Mobility of Holes in Nanometer Ge-on-Si p-Type Metal-Oxide-Semiconductor Field-Effect Transistors at Low Temperatures

• Authors: I. Grigelionis , K. Fobelets , B. Vincent , J. Mitard , B. De Jaeger , E. Simoen , T. Hoffman , D. Yavorskiy , J. Łusakowski
• Languages of publication: EN

Abstracts

EN

We investigated magnetoresistance of p-type Ge-on-Si metal-oxide-semiconductor field-effect transistors in order to determine the hole mobility μ as a function of the gate polarization (V_{G}). Measurements were carried out at 4.2 K and magnetic fields up to 10 T. The signal measured was proportional to the derivative of the transistor resistance with respect to V_{G}. To determine the hole mobility we developed a method to treat the measured signal which is based on a numerical solution of a differential equation resulting from the theoretical description of the experimental procedure. As a result, we obtained a non-monotonic μ(V_{G}) dependence which is a characteristic feature of the carrier transport in gated two-dimensional structures.

Keywords

EN

72.20.My; 85.30.Tv

Discipline

• 72.20.My: Galvanomagnetic and other magnetotransport effects
• 85.30.Tv: Field effect devices

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 5
• Pages: 933-935

Dates

published

2011-11

Contributors

author

I. Grigelionis

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

K. Fobelets

• Imperial College London, Exhibition Road, SW7 2BT London, UK

author

B. Vincent

• IMEC, Kapeldreef 75, 3001 Leuven, Belgium

author

J. Mitard

• IMEC, Kapeldreef 75, 3001 Leuven, Belgium

author

B. De Jaeger

• IMEC, Kapeldreef 75, 3001 Leuven, Belgium

author

E. Simoen

• IMEC, Kapeldreef 75, 3001 Leuven, Belgium

author

T. Hoffman

• IMEC, Kapeldreef 75, 3001 Leuven, Belgium

author

D. Yavorskiy

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

J. Łusakowski

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

References

• 1. Y.M. Meziani, J. Łusakowski, W. Knap, N. Dyakonova, F. Teppe, K. Romanjek, M. Ferrier, R. Clerc, G. Ghibaudo, F. Boeuf, T. Skotnicki, J. Appl. Phys. 96, 5761 (2004)
• 2. A C. Beer, Solid State Phys. Supplement 4 (1963)
• 3. R. Tauk, J. Łusakowski, W. Knap, Z. Bougrioua, M. Azize, P. Lorenzini, M. Sakowicz, K. Karpierz, C. Fenouillet-Beranger, M. Casse, C. Gallon, F. Boeuf, T. Skotnicki, J. Appl. Phys. 102, 103701 (2007)
• 4. J. Łusakowski, W. Knap, Y. Meziani, J.-P. Cesso, A. El Fatimy, R. Tauk, N. Dyakonova, G. Ghibaudo, F. Boeuf, T. Skotnicki, Appl. Phys. Lett. 87, 053507 (2005)
• 5. M. Sakowicz, J. Łusakowski, K. Karpierz, M. Grynberg, B. Majkusiak, Appl. Phys. Lett. 90, 172104 (2007)

Identifiers

DOI

10.12693/APhysPolA.120.933