Enhancement of the Ultraviolet Luminescence Intensity from Cd-Doped ZnO Films Caused by Exciton Binding

• Authors: I. Shtepliuk , G. Lashkarev , O. Khyzhun , B. Kowalski , A. Reszka , V. Khomyak , V. Lazorenko , I. Timofeeva
• Languages of publication: EN

Abstracts

EN

ZnO films doped with the cadmium (0.4-0.6%) were grown on crystalline sapphire c-Al_2O_3 substrates applying radiofrequency magnetron sputtering at the temperature of 400°C in Ar-O_2 atmosphere. The as-grown films were investigated in detail using X-ray diffraction, X-ray photoelectron spectroscopy, and cathodoluminescence spectra. The X-ray diffraction analysis revealed that the films possess a hexagonal wurtzite-type structure with the dominant crystallite orientation along the c axis. It was found that the small concentration of the cadmium significantly enhances the ultraviolet emission associated with excitonic transitions. We suggest that this enhancement effect mainly results from appearance of the cadmium isoelectronic traps, which may bind an exciton, thereby increasing the probability of radiation recombination. The effect of Cd isoelectronic impurity on structural and luminescent properties of ZnO films is discussed.

Keywords

EN

78.55.Et; 78.67.Bf; 81.05.Dz; 81.07.Bc

Discipline

• 78.67.Bf: Nanocrystals, nanoparticles, and nanoclusters
• 78.55.Et: II-VI semiconductors
• 81.05.Dz: II-VI semiconductors
• 81.07.Bc: Nanocrystalline materials

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 5
• Pages: 914-917

Dates

published

2011-11

Contributors

author

I. Shtepliuk

• I. Frantsevich Institute for Problems of Material Science, NASU, 03680, Kiev-142, Ukraine

author

G. Lashkarev

• I. Frantsevich Institute for Problems of Material Science, NASU, 03680, Kiev-142, Ukraine

author

O. Khyzhun

• I. Frantsevich Institute for Problems of Material Science, NASU, 03680, Kiev-142, Ukraine

author

B. Kowalski

• Institute of Physics, Polish Academy of Sciences, Warsaw, Poland

author

A. Reszka

• Institute of Physics, Polish Academy of Sciences, Warsaw, Poland

author

V. Khomyak

• Chernivtsi National University, 58012, Chernivtsi, Ukraine

author

V. Lazorenko

• I. Frantsevich Institute for Problems of Material Science, NASU, 03680, Kiev-142, Ukraine

author

I. Timofeeva

• I. Frantsevich Institute for Problems of Material Science, NASU, 03680, Kiev-142, Ukraine

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Identifiers

DOI

10.12693/APhysPolA.120.914